The structural, chemical, and electronic properties of a stable GaS/GaAs interface
نویسندگان
چکیده
A stable GaS passivating layer was deposited on GaAs using a-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C – V) behavior with very small loop hysteresis. The C – V curves showed no aging after 20 months. © 1999 American Institute of Physics. @S0021-8979~99!00424-7#
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